Switching by point-contact spin injection in a continuous film

被引：32

作者：

Chen, TY ^{[1
]}

Ji, Y ^{[1
]}

Chien, CL ^{[1
]}

机构：

[1] Johns Hopkins Univ, Dept Phys & Astron, Baltimore, MD 21218 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 03期

关键词：

D O I：

10.1063/1.1641170

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spin-polarized currents injected through a point-contact into a continuous Co/Cu/Co trilayer film can reversibly switch the magnetization of small magnetic bits in the top Co layer. The magnetic states written depend on the polarity of the injection currents, and remain stable at room temperature. The reversible writing can be achieved for a wide range of contact resistances with a well-defined voltage for the reversal. (C) 2004 American Institute of Physics.

引用

页码：380 / 382

页数：3

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