Ballistic magnetoresistance versus magnetostriction effects in electrodeposited nanocontacts at room temperature

被引:7
作者
Garcia, N [1 ]
Wang, H [1 ]
Cheng, H [1 ]
Nikolic, ND [1 ]
机构
[1] CSIC, Lab Fis Sistemas Pequenos & Nanotechnol, E-28006 Madrid, Spain
关键词
electrodeposition; magnetoresistance; magnetostriction; nanocontact;
D O I
10.1109/TMAG.2003.815708
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors present experiments and discuss recent results on ballistic magnetotesistance in nanometer size (on the order of 1 to 10 nm) nanocontacts grown by electrodeposition in thin wires and in thin films of a few nanometer thickness. Very large values of magnetoresistance are shown (up to 4000% and more could be obtained). These experiments as well as others are explained in terms of a dead magnetic layer appearing at the nanocontact. The experiments are also discussed in the context of magnetostriction effects, in. the light of existing first principle calculations and observed inverse magnetoresistive effects.
引用
收藏
页码:2776 / 2781
页数:6
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