Chaotic motion of space charge wave fronts in semiconductors under time-independent voltage bias

被引:12
作者
Cantalapiedra, IR
Bergmann, MJ
Bonilla, LL
Teitsworth, SW
机构
[1] Univ Politecn Cataluna, Dept Fis Aplicada, E-08028 Barcelona, Spain
[2] Duke Univ, Dept Phys, Durham, NC 27708 USA
[3] Duke Univ, Ctr Nonlinear & Complex Syst, Durham, NC 27708 USA
[4] Univ Carlos III Madrid, Escuela Politecn Super, Dept Matemat, Leganes 28911, Spain
来源
PHYSICAL REVIEW E | 2001年 / 63卷 / 05期
关键词
D O I
10.1103/PhysRevE.63.056216
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
A standard drift-diffusion model of space charge wave propagation in semiconductors has been studied numerically and analytically under de voltage bias. For sufficiently long samples, appropriate contact resistivity, and applied voltage-such that the sample is biased in a regime of negative differential resistance-we find chaos in the propagation of nonlinear fronts (charge monopoles of alternating sign) of electric field. The chaos is always low dimensional, but has a complex spatial structure; this behavior can be interpreted using a finite-dimensional asymptotic model in which the front (charge monopole) positions and the electrical current are the only dynamical variables.
引用
收藏
页码:562161 / 562167
页数:7
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