SOLITARY-WAVE DYNAMICS IN EXTRINSIC SEMICONDUCTORS UNDER DC VOLTAGE BIAS

被引:12
作者
CANTALAPIEDRA, IR
BONILLA, LL
BERGMANN, MJ
TEITSWORTH, SW
机构
[1] UNIV CARLOS III,ESCUELA POLITECN SUPER,E-28913 LEGANES,SPAIN
[2] DUKE UNIV,DEPT PHYS,DURHAM,NC 27708
来源
PHYSICAL REVIEW B | 1993年 / 48卷 / 16期
关键词
D O I
10.1103/PhysRevB.48.12278
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Numerical-simulation results are presented for a simple drift-diffusion model which describes time-dependent and nonlinear electrical transport properties of extrinsic semiconductors under time-independent (dc) voltage bias. Simulations for finite-length samples with Ohmic boundary conditions yield dynamically stable solitary space-charge waves that travel periodically across the sample. Numerical estimates of wave speed, the wave size, and onset phenomena are in excellent agreement with recent experiments in p-type germanium.
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页码:12278 / 12281
页数:4
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