FORM AND STABILITY OF ELECTRIC-FIELD PROFILES WITHIN A NEGATIVE DIFFERENTIAL MOBILITY SEMICONDUCTOR

被引：29

作者：

GRUBIN, HL

SHAW, MP

SOLOMON, PR

机构：

[1] UNITED AIRCRAFT RES LABS, E HARTFORD, CT 06108 USA

[2] WAYNE STATE UNIV, DEPT ELECT ENGN, DETROIT, MI 48202 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1973年 / ED20卷 / 01期

关键词：

D O I：

10.1109/T-ED.1973.17610

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：63 / 78

页数：16

相关论文

共 37 条

[1] INDIRECT ELECTRON DRIFT VELOCITY VERSUS ELECTRIC FIELD MEASUREMENT IN GAAS
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[2] INHOMOGENEOUS FIELD DISTRIBUTION IN HOMOGENEOUS SEMICONDUCTORS HAVING AN N-SHAPED NEGATIVE DIFFERENTIAL CONDUCTIVITY
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[3] INFLUENCE OF BOUNDARY CONDITIONS ON HIGH-FIELD DOMAINS IN GUNN DIODES
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[5] GUNN EFFECT
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[6] MEASUREMENT OF VELOCITY FIELD CHARACTERISTIC OF ELECTRONS IN GERMANIUM
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[J]. APPLIED PHYSICS LETTERS, 1968, 12 (03) : 111 - &
[7] BOUNDARY CONDITIONS AND HIGH-FIELD DOMAINS IN GAAS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (04) : 262 - +
[8] SWITCHING AND LOW-FIELD BREAKDOWN IN N-GAAS BULK DIODES
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[J]. APPLIED PHYSICS LETTERS, 1966, 9 (04) : 140 - +
[9] LSA OSCILLATOR-DIODE THEORY
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[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) : 3096 - +
[10] CRITICAL CONDITIONS FOR TRANSITIONS BETWEEN STATIONARY AND NON-STATIONARY HIGH-FIELD DOMAINS IN SEMI-INSULATORS
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[J]. PHYSICA STATUS SOLIDI, 1968, 30 (02): : 627 - +

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