Laser-induced phase transitions of Ge2Sb2Te5 thin films used in optical and electronic data storage and in thermal lithography

被引：84

作者：

Chu, Cheng Hung ^{[1
,2
]}

Shiue, Chiun Da ^{[1
]}

Cheng, Hsuen Wei ^{[2
]}

Tseng, Ming Lun ^{[1
]}

Chiang, Hai-Pang ^{[2
]}

Mansuripur, Masud ^{[3
]}

Tsai, Din Ping ^{[1
,4
,5
]}

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan

[2] Natl Taiwan Ocean Univ, Inst Optoelect Sci, Chilung 202, Taiwan

[3] Univ Arizona, Coll Opt Sci, Tucson, AZ 85721 USA

[4] Acad Sinica, Res Ctr Appl Sci, Taipei 115, Taiwan

[5] Natl Appl Res Labs, Instrument Technol Res Ctr, Hsinchu 300, Taiwan

来源：

OPTICS EXPRESS | 2010年 / 18卷 / 17期

关键词：

CHANGE RECORDING LAYER; INDUCED CRYSTALLIZATION; MARKS; SUPERRESOLUTION; MEDIA;

D O I：

10.1364/OE.18.018383

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Amorphous thin films of Ge2Sb2Te5, sputter-deposited on a ZnS-SiO2 dielectric layer, are investigated for the purpose of understanding the structural phase-transitions that occur under the influence of tightly-focused laser beams. Selective chemical etching of recorded marks in conjunction with optical, atomic force, and electron microscopy as well as local electron diffraction analysis are used to discern the complex structural features created under a broad range of laser powers and pulse durations. Clarifying the nature of phase transitions associated with laser-recorded marks in chalcogenide Ge2Sb2Te5 thin films provides useful information for reversible optical and electronic data storage, as well as for phase-change (thermal) lithography. (C) 2010 Optical Society of America

引用

页码：18383 / 18393

页数：11

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