Electron and hole g-factors in GdTe/CdMgTe quantum wells

被引：30

作者：

Zhao, QX ^{[1
]}

Oestreich, M ^{[1
]}

Magnea, N ^{[1
]}

机构：

[1] CEA,DEPT RECH FUNDAMENTALE MAT CONDENSEE,F-38054 GRENOBLE 9,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 24期

关键词：

D O I：

10.1063/1.117195

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single CdTe/CdMgTe quantum well (QW) structures are investigated by stationary and time-resolved photoluminescence in the presence of an applied magnetic field. We study the dependence of the electron and the hole g factors on the well width by combining Zeeman measurements and the recently developed spin quantum beats technique. The experimental results show that both the electron and the hole g factors have the same sign in wide QWs and increase with decreasing well width. The electron spin phase relaxation time is about 250 ps in our QW structures. (C) 1996 American Institute of Physics.

引用

页码：3704 / 3706

页数：3

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