FABRICATION AND OPTICAL CHARACTERIZATION OF WET CHEMICALLY ETCHED CDTE/CDMGTE WIRES

被引:8
作者
ILLING, M
BACHER, G
FORCHEL, A
WAAG, A
LITZ, T
LANDWEHR, G
机构
[1] Technische Physik, Universität Würzburg, D-97074 Würzburg, Am Hubland
[2] Experimentelle Physik III, Universität Würzburg, D-97074 Würzburg, Am Hubland
关键词
D O I
10.1016/0022-0248(94)90883-4
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We have fabricated optically active semiconductor wires based on CdTe/CdMgTe quantum well structures by electron beam lithography and wet chemical etching. Wire widths between 5 and 40 nm have been achieved. The wires have been characterized by photoluminescence spectroscopy. Down to about 300 nm, no significant decrease of the photoluminescence intensity is observed at 5 K. In narrower wires, free excitons can diffuse to the open wire surface and recombine nonradiatively thereby causing a reduction of the quantum efficiency. Increasing the temperature up to 100 K causes a larger diffusion length of free excitons which leads to a reduction of the quantum efficiency in small wires. Bound excitons, which cannot diffuse towards the wire surface, show significantly higher luminescence efficiency in narrow wires compared to free excitons.
引用
收藏
页码:638 / 642
页数:5
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