IMPACT OF SIDEWALL RECOMBINATION ON THE QUANTUM EFFICIENCY OF DRY ETCHED INGAAS/INP SEMICONDUCTOR WIRES

被引：78

作者：

MAILE, BE ^{[1
]}

FORCHEL, A ^{[1
]}

GERMANN, R ^{[1
]}

GRUTZMACHER, D ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST HALBLEITERTECH,D-5100 AACHEN,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 16期

关键词：

D O I：

10.1063/1.101327

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1552 / 1554

页数：3

共 12 条

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[4] NANOMETER LITHOGRAPHY FOR III-V SEMICONDUCTOR WIRES USING CHLOROMETHYLATED POLY-ALPHA-METHYLSTYRENE RESIST
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[5] MAYER G, UNPUB
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[7] OBSERVATION OF DISCRETE ELECTRONIC STATES IN A ZERO-DIMENSIONAL SEMICONDUCTOR NANOSTRUCTURE
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[J]. PHYSICAL REVIEW LETTERS, 1988, 60 (06) : 535 - 537
[8] SCATTERING SUPPRESSION AND HIGH-MOBILITY EFFECT OF SIZE-QUANTIZED ELECTRONS IN ULTRAFINE SEMICONDUCTOR WIRE STRUCTURES
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[9] SZE SM, 1969, PHYSICS SEMICONDUCTO, P71
[10] OPTICAL MEASUREMENT OF SURFACE RECOMBINATION IN INGAAS QUANTUM WELL MESA STRUCTURES
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[J]. APPLIED PHYSICS LETTERS, 1988, 53 (04) : 302 - 303

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