NANOMETER LITHOGRAPHY FOR III-V SEMICONDUCTOR WIRES USING CHLOROMETHYLATED POLY-ALPHA-METHYLSTYRENE RESIST

被引：28

作者：

MAILE, BE

FORCHEL, A

GERMANN, R

MENSCHIG, A

MEIER, HP

GRUTZMACHER, D

机构：

[1] IBM CORP,ZURICH RES LAB,DIV RES,CH-8803 RUSCHLIKON,SWITZERLAND

[2] RHEIN WESTFAL TH AACHEN,INST HALBLEITERTECH,D-5100 AACHEN,FED REP GER

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584076

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：2308 / 2311

页数：4

相关论文

共 8 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT
ARAKAWA, Y
SAKAKI, H
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (11) : 939 - 941
[2] REACTIVE ION ETCHING OF GAAS USING CCL2F2 AND THE EFFECT OF AR ADDITION
CHAPLART, J
FAY, B
LINH, NT
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1050 - 1052
[3] REACTIVE-ION ETCHING OF GAAS AND INP USING CCL2F2-AR-O2
HU, EL
HOWARD, RE
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (11) : 1022 - 1024
[4] CHLOROMETHYLATED POLYSTYRENE AS A DRY ETCHING-RESISTANT NEGATIVE RESIST FOR SUB-MICRON TECHNOLOGY
IMAMURA, S
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (09) : 1628 - 1630
[5] REACTIVE ION ETCHING OF GAAS IN CCI4-XFX(X=0,2,4) AND MIXED CCI4-XFX/AR DISCHARGES
KLINGER, RE
GREENE, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1595 - 1604
[6] FABRICATION OF NANOMETER WIDTH GaAs/AlGaAs AND InGaAs/InP QUANTUM WIRES.
Maile, B.E.
Forchel, A.
German, R.
Menschig, A.
Streubel, K.
Scholz, F.
Weimann, G.
Schlapp, W.
[J]. Microelectronic Engineering, 1987, 6 (1-4) : 163 - 168
[7] A NEW HIGH-RESOLUTION NEGATIVE ELECTRON RESIST CHLOROMETHYLATED POLY-ALPHA-METHYLSTYRENE (ALPHA-M-CMS)
SUKEGAWA, K
SUGAWARA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) : L583 - L586
[8] RESOLUTION LIMIT OF NEGATIVE ELECTRON RESIST EXPOSED ON A THIN-FILM SUBSTRATE
TAMAMURA, T
SUKEGAWA, K
SUGAWARA, S
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : 1831 - 1835