Activation energy of interdiffusion and interface structure for CoFe/Cu spin-valves

被引：15

作者：

Saito, AT ^{[1
]}

Iwasaki, H ^{[1
]}

Kamiguchi, Y ^{[1
]}

Fuke, HN ^{[1
]}

Sahashi, M ^{[1
]}

机构：

[1] Toshiba Res & Dev Ctr, Mat & Devices Res Labs, Saiwai Ku, Kawasaki, Kanagawa 210, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1998年 / 34卷 / 04期

关键词：

CoFe/Cu spin-valve; interdiffusion; activation energy; vacancy mechanism; thermal stability;

D O I：

10.1109/20.706568

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Annealing time and temperature dependences of MR ratio in CoFe/Cu spin-valves were investigated. Thermal deterioration of MR ratio was well explained by considering two phenomena with effective activation energies of 2.16 eV and 1.57 eV for CoZrNb/NiFe/CoFe/Cu/CoFe/FeMn spin-valves, and considering one phenomenon with a value of 2.49 eV for CoZrNb/NiFe/CoFe/Cu/CoPe/IrMn spin-valves, respectively. These values are in good agreement with activation energies of interdiffusion based on the vacancy mechanism. It is shown that no significant change in MR ratio is evaluated from the effective activation energies for the period of more than 10 years at 150 degrees C in CoZrNb/NiFe/CoPe/Cu/CoFe/IrMn spin-valve films.

引用

页码：1420 / 1422

页数：3

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