A DEPFET pixel Bioscope for the use in autoradiography

The DEPFET structure consists of a field effect transistor integrated on high-resistivity silicon, which can be used as a radiation detector. Due to several features (e.g. very low noise at room temperature, information storage capability and a thin, homogeneous entrance window), the DEPFET concept is useful for various applications. In order to apply a DEPFET pixel detector in autoradiography, 64 x 64 matrices with a pixel size of 50 mum x 50 mum were built. Using several ASIC chips for the readout control and signal processing, a complete sensor system allows a row-by-row detector readout with almost continuous sensitivity. First results on the device homogenity, the quantum efficiency and the very promising noise performance are presented. (C) 2000 Published by Elsevier Science B.V. All rights reserved.