Manipulation of spin dephasing in InAs quantum wires

被引：10

作者：

Cheng, JL

Weng, MQ

Wu, MW ^{[1
]}

机构：

[1] Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China

[2] Univ Sci & Technol China, Acad Sinica, Struct Res Lab, Anhua 230026, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2003年 / 128卷 / 9-10期

基金：

中国国家自然科学基金;

关键词：

semiconductors; spin dynamics;

D O I：

10.1016/j.ssc.2003.08.033

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The spin dephasing due to the Rashba spin-orbit coupling, especially its dependence on the direction of the electric field is studied in InAs quantum wire. We find that the spin dephasing is strongly affected by the angle of Rashba effective magnetic field and the applied magnetic field (AMF). The nonlinearity in spin dephasing time versus the direction of the electric field shows the potential to manipulate the spin lifetime in spintronic device. Moreover, we figure out a quantity that can well represent the inhomogeneous broadening of the system which may help LIS to understand the many-body spin dephasing due to the Rashba effect. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：365 / 368

页数：4

共 18 条

[11] Rashba-effect-induced spin dephasing in n-type InAs quantum wells [J].