Electrical properties of PZT thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

被引：7

作者：

Kim, ST ^{[1
]}

Kim, JW ^{[1
]}

Jung, SW ^{[1
]}

Shin, JS ^{[1
]}

Ahn, ST ^{[1
]}

Lee, WJ ^{[1
]}

机构：

[1] SAMSUNG ELECTR CO,SEMICOND RES & DEV CTR,SUWON,SOUTH KOREA

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1996年 / 45卷 / 02期

关键词：

PZT thin films; electrical properties; ferroelectric thin films;

D O I：

10.1016/0254-0584(96)80094-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ferroelectric Pb(Zr,Ti)O-3 thin films were successfully fabricated on Pt-coated Si substrates by the electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR PECVD) method using metal-organic (MO) sources. Perovskite structures with well-developed crystalline grains are obtained at a substrate temperature of 500 degrees C. These PZT films, with thicknesses of about 1000 Angstrom, show high charge storage densities (P-max-P-r = 10-15 mu C cm(-2) for 1.5 V operation) and low leakage current densities (approximate to 10(-6) A cm(-2) at 1.5 V). The effects of the Zr/Ti concentration ratio in the film and the rapid thermal annealing on the electrical properties of the films were also studied.

引用

页码：155 / 158

页数：4

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