Variable temperature Raman microscopy as a nanometrology tool for graphene layers and graphene-based devices

被引:157
作者
Calizo, I.
Miao, F.
Bao, W.
Lau, C. N.
Balandin, A. A. [1 ]
机构
[1] Univ Calif Riverside, Dept Elect Engn, Nano Device Lab, Riverside, CA 92521 USA
[2] Univ Calif Riverside, Dept Phys & Astron, Riverside, CA 92521 USA
关键词
D O I
10.1063/1.2771379
中图分类号
O59 [应用物理学];
学科分类号
摘要
Raman microscopy of graphene was carried out over the temperature range from 83 to 373 K. The number of layers was independently confirmed by the quantum Hall measurements and atomic force microscopy. The values of the temperature coefficients for the G and 2D-band frequencies extracted from Raman spectra of the single-layer graphene are -(1.6+/-0.2)x10(-2) cm(-1)/K and -(3.4+/-0.4)x10(-2) cm(-1)/K, respectively. The G peak temperature coefficients of the bilayer graphene and bulk graphite are -(1.5+/-0.06)x10(-2) cm(-1)/K and -(1.1+/-0.04)x10(-2) cm(-1)/K, respectively. The results are important for the application of Raman microscopy as a nanometrology tool for the graphene-based devices operating at various temperatures. (C) 2007 American Institute of Physics.
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页数:3
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