Probing radicals in hot wire decomposition of silane using single photon ionization

被引:36
作者
Duan, HL [1 ]
Zaharias, GA [1 ]
Bent, SF [1 ]
机构
[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
关键词
D O I
10.1063/1.1355994
中图分类号
O59 [应用物理学];
学科分类号
摘要
Radicals produced by the hot wire-induced decomposition of silane have been identified using vacuum ultraviolet single photon ionization (SPI). This laser-based technique uses 118 nm photons (10.5 eV) to ionize gas phase species; the resulting photoions are detected using time-of-flight mass spectrometry. The major silicon-containing gas-phase species identified by SPI during hot-wire activation of silane gas are Si, SiH3, and Si2H6. These results demonstrate that single photon ionization can be a powerful probe for in situ, real-time detection of multiple species in hot wire chemical vapor deposition. (C) 2001 American Institute of Physics.
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页码:1784 / 1786
页数:3
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