Pentacene thin-film transistors with Al2O3+x gate dielectric films deposited on indium-tin-oxide glass

被引：93

作者：

Lee, J ^{[1
]}

Kim, JH ^{[1
]}

Im, S ^{[1
]}

机构：

[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 13期

关键词：

D O I：

10.1063/1.1613997

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the fabrication of pentacene thin-film transistors (TFTs) with Al2O3+x films as the gate dielectric that has been deposited on indium-tin-oxide glass by rf magnetron sputtering at room temperature. Although the Al2O3+x was expected to show lower capacitance and breakdown field than stoichiometric Al2O3, our pentacene TFTs with optimized thin Al2O3+x gate dielectric exhibited a moderately high field mobility of 0.14 cm(2)/V s, an outstanding subthreshold slope of 0.88 V/dec, and an on/off ratio over 10(6). Our work demonstrates that RT-deposited Al2O3+x is a promising gate dielectric material for organic TFTs. (C) 2003 American Institute of Physics.

引用

页码：2689 / 2691

页数：3