4 MeV electron irradiation effect on electroluminesencence from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures

被引：4

作者：

Ran, GZ

Qin, WC

Ma, ZC

Zong, WH

Qin, GG ^{[1
]}

机构：

[1] Beijing Univ, Dept Phys, Beijing 100871, Peoples R China

[2] Acad Sinica, Int Ctr Mat Phys, Shenyang 110015, Peoples R China

[3] HSRI, Natl Key Lab ASIC, Shijiazhuang 050051, Peoples R China

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2001年 / 173卷 / 03期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1016/S0168-583X(00)00382-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The effects of 3 MeV electron irradiation on electroluminescence (EL) from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures are reported. The SiO2 and Si-rich SiO2 films were deposited on p-Si wafers using the magnetron sputtering technique and then processed by rapid thermal annealing (RTA) at a series of temperatures. The Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures were irradiated by electrons with an energy of 4 Mev and a dose rate of 8.5 x 10(12) cm(-2) s(-1) EL intensities of the two structures as functions of the RTA temperature and electron irradiation time have been studied. For the Au/SiO2/p-Si structure with SiO2/p-Si annealed at 900 degreesC, the EL intensity increased to a maximum in electron irradiation for 20 s, which is larger than that before irradiation by a factor of 3. These experimental results have been discussed. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：299 / 303

页数：5

共 17 条

[1] Electroluminescence from Au native silicon oxide layer p+-Si and Au native silicon oxide layer n+-Si structures under reverse biases [J].