Control of crystal structure and ferroelectric properties of Pb(ZrxTi1-x)O3 films formed by pulsed laser deposition

被引:20
作者
Fujita, H
Goto, S
Sakashita, M
Ikeda, H
Sakai, A
Zaima, S
Yasuda, Y
机构
[1] Nagoya Univ, Grad Sch Engn, Dept Cristalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[2] Nagoya Univ, Ctr Cooperat Res Adv Sci & Technol, Chikusa Ku, Nagoya, Aichi 4648603, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2000年 / 39卷 / 12B期
关键词
ferroelectric properties; Pb(ZrxTi1-x)O-3 (PZT); pulsed laser deposition (PLD); orientation; trigonal;
D O I
10.1143/JJAP.39.7035
中图分类号
O59 [应用物理学];
学科分类号
摘要
Pb(ZrxTi1-x)O-3 (PZT) thin films on Pt/SiO2/Si substrates formed by pulsed laser deposition (PLD) and subsequent rapid thermal annealing (RTA) have been investigated. X-ray diffraction (XRD) and atomic force microscopy showed that the crystalline structure and the crystallographic orientation of PZT films after RTA, sensitively depended on the microstructure of as-deposited films. The preferentially (100)-oriented perovskite PZT films forming a trigonal structure were obtained from the as-deposited films that had contained small grains having a pyrochlore structure. This type of perovskite structure was found to depend also on the oxygen pressure during PLD. Chemical composition analysis by X-ray photoelectron spectroscopy clearly revealed the characteristics of a Zr-rich composition which induced the trigonal phases in the films, which were consistent with the XRD results. The capacitors made from these films showed large remanent polarization.
引用
收藏
页码:7035 / 7039
页数:5
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