Scanning capacitance microscopy of nanostructures - art. no. 075315

被引：8

作者：

Ruda, HE ^{[1
]}

Shik, A ^{[1
]}

机构：

[1] Univ Toronto, Ctr Adv Nanotechnol, Toronto, ON M5S 3E4, Canada

来源：

PHYSICAL REVIEW B | 2005年 / 71卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.71.075316

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A theory is developed for scanning capacitance microscopy (SCM) of samples containing quantum wells, nanowires, and nanodots. The observed SCM image does not reproduce the geometric characteristics of the system but can be used for extracting some important information. For quantum wells and nanowire arrays, SCM gives an opportunity to determine the doping level of nanostructures. For individual nanowires and dots, the positions and amplitude of SCM maxima give, respectively, the in-plane location and the depth of the objects, and the pattern shape is extremely sensitive to the nanowire orientation.

引用

页数：7

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