Electric measurements by AFM on silicon nanocrystals

被引:3
作者
Decossas, S [1 ]
Mazen, F
Baron, T
Souifi, A
Brémond, G
机构
[1] Inst Natl Sci Appl, CNRS, UMR 5511, Phys Mat Lab, F-69621 Villeurbanne, France
[2] Lab Technol Microelect, Grenoble, France
关键词
silicon nanocrystals; AFM; SCM;
D O I
10.1016/S1386-9477(02)00864-0
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Scanning capacitance microscopy (SCM) has been used to characterize Silicon nanocrystals (Si-nc) embedded in Silicon oxide. Our experimental approach is based on the charging of the surface by the AFM tip and its effect on SCM measurements. We then present SCM measurements that show electrical contrast on one single Si-nc. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:543 / 545
页数:3
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