Imaging of stored charges in Si quantum dots by tapping and electrostatic force microscopy

被引：36

作者：

Guillemot, C

Budau, P

Chevrier, J

Marchi, F

Comin, F

Alandi, C

Bertin, F

Buffet, N

Wyon, C

Mur, P

机构：

[1] European Synchrotron Radiat Facil, F-38043 Grenoble 9, France

[2] CNRS Grenoble, LEPES, F-38042 Grenoble, France

[3] Univ Grenoble 1, Grenoble 9, France

[4] Univ Bucharest, Fac Phys, OP 15, Magurele 96700, Romania

[5] CEA, LETI, Dept Technol Silicium, F-38054 Grenoble 9, France

来源：

EUROPHYSICS LETTERS | 2002年 / 59卷 / 04期

关键词：

D O I：

10.1209/epl/i2002-00143-x

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We studied the charge storage and subsequent imaging of silicon quantum dots (SiQD) embedded in a SiO2 film by using atomic-force microscopy (AFM) in tapping and electrostatic force microscopy (EFM) modes. The controllable deposition of both positive and negative localized charges in SiQD is described. The dynamics of the deposited charges is studied and the charge decay time constant is determined from the measurements. A simple analysis is presented to explain the contrast in tapping and EFM images and to quantify the total amount of stored charge.

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页码：566 / 571

页数：6

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