Room temperature single electron effects in a Si nano-crystal memory

被引：53

作者：

Kim, I

Han, S

Han, K

Lee, J

Shin, H

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

[2] Wonkwang Univ, Sch Elect Engn, Chunbuk 570749, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 12期

关键词：

D O I：

10.1109/55.806109

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An MOS memory based on Si nano-crystals has been fabricated. We have developed a repeatable process of forming uniform, small-size and high-density Si nano crystals and spherical nano-crystals of about 4.5 nm in diameter with density of 5 x 10(11)/cm(2) were obtained. Threshold voltage shift of 0.48 V corresponding to single electron storage in individual nano-crystals is obtained. For the first time, room temperature single electron effects are observed. These prove the feasibility of practical Si nano-crystal memory.

引用

页码：630 / 631

页数：2

共 5 条

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