Stability of densely contact-electrified charges on thin silicon oxide in air

被引：9

作者：

Morita, S

Uchihashi, T

Okusako, T

Yamanishi, Y

Oasa, T

Sugawara, Y

机构：

[1] HIROSHIMA UNIV, FAC SCI, DEPT PHYS, HIGASHIHIROSHIMA 739, JAPAN

[2] SUMITOMO MET IND LTD, ADV TECHNOL RES LABS, AMAGASAKI, HYOGO 660, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1996年 / 35卷 / 11期

关键词：

stability of deposited charges; charged trap sites; contact electrification; silicon oxide; stable state; atomic force microscope; charge dissipation;

D O I：

10.1143/JJAP.35.5811

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By changing the polarity of charged trap sites; we investigated the stability of densely contact-electrified charges on thin silicon oxide in air using a modified atomic force microscope. For usual silicon oxides with positively charged trap sites, a stable state is obtained only for negative charge deposition, while for modified silicon oxides with negatively charged trap sites, a stable state is obtained only for positive charge deposition. As a result, we concluded that charged trap sites make densely contact-electrified charges with the same polarity unstable due to the strong Coulomb repulsive force.

引用

页码：5811 / 5814

页数：4

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