OBSERVATION OF SINGLE CHARGE-CARRIERS BY FORCE MICROSCOPY

被引：229

作者：

SCHONENBERGER, C ^{[1
]}

ALVARADO, SF ^{[1
]}

机构：

[1] IBM CORP,DIV RES,ZURICH RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.65.3162

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The scanning force microscope is used to deposite charge carriers on insulating Si3N4 films and to monitor their recombination. The charge decay shows up as a discontinuous staircase, demonstrating single-carrier resolution. The decay is found to be controlled by thermionic emission. © 1990 The American Physical Society.

引用

页码：3162 / 3164

页数：3

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