TIME-DEPENDENT DIELECTRIC-BREAKDOWN OF THIN SILICON-OXIDE USING DENSE CONTACT ELECTRIFICATION

被引：19

作者：

FUKANO, Y ^{[1
]}

HONTANI, KJ ^{[1
]}

UCHIHASHI, T ^{[1
]}

OKUSAKO, T ^{[1
]}

CHAYAHARA, A ^{[1
]}

SUGAWARA, Y ^{[1
]}

YAMANISHI, Y ^{[1
]}

OASA, T ^{[1
]}

MORITA, S ^{[1
]}

机构：

[1] SUMITOMO MET IND LTD, ADV TECHNOL RES LABS, AMAGASAKI, HYOGO 660, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1994年 / 33卷 / 6B期

关键词：

DENSE CONTACT ELECTRIFICATION; THIN SILICON OXIDE LAYER; TDDB; CHARGE-TO-BREAKDOWN; AFM/STM; NONCONTACT DC-MODE;

D O I：

10.1143/JJAP.33.3756

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We achieved time dependent dielectric breakdown (TDDB) measurement of a thin silicon oxide microscopically using contact electrification. By increasing the external bias voltage, TDDBs of the oxide layer without and with oxide surface roughening were observed sequentially. Charge-to-breakdown in the contact electrification was estimated to be on the order of 10(-5) approximately 10(-6) C/cm2. This value is higher than that of electrified charge density in the absence of external bias voltage, but is much smaller than the value of approximately 5 x 10(-1) C/cm2 obtained in the conventional TDDB measurement using a metal-oxide-semiconductor (MOS) capacitor. From calculation of the number of injected charges per atom, TDDB measurement using contact electrification is expected to provide a more quantitative evaluation of charge-to-breakdown than that using a MOS capacitor.

引用

页码：3756 / 3760

页数：5

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