STABLE-UNSTABLE PHASE-TRANSITION OF DENSELY CONTRACT-ELECTRIFIED ELECTRONS ON THIN SILICON-OXIDE

被引：19

作者：

MORITA, S ^{[1
]}

SUGAWARA, Y ^{[1
]}

FUKANO, Y ^{[1
]}

UCHIHASHI, T ^{[1
]}

OKUSAKO, T ^{[1
]}

CHAYAHARA, A ^{[1
]}

YAMANISHI, Y ^{[1
]}

OASA, T ^{[1
]}

机构：

[1] SUMITOMO MET IND LTD, ADV TECHNOL RES LABS, AMAGASAKI, HYOGO 660, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 12B期

关键词：

CONTACT ELECTRIFICATION; STABLE STATE; UNSTABLE STATE; PHASE TRANSITION; SILICON OXIDE; CHARGE DISSIPATION; DENSELY DEPOSITED ELECTRONS; ATOMIC FORCE MICROSCOPY;

D O I：

10.1143/JJAP.32.L1852

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using reproducible and controllable contact electrification, we studied the charge dissipation of densely deposited electrons on a thin silicon oxide surface by electrostatic force measurement using a modified atomic force microscope. As a result, by increasing the density of contact-electrified electrons, we observed an appearance of a stable state of the contact-electrified electrons and its disappearance due to charge dissipation, i.e., a kind of stable-unstable phase transition. We also observed saturation of the deposited electron density with the spatial spread of deposited electrons.

引用

页码：L1852 / L1854

页数：3

共 8 条

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