Characterization of a planar spiral inductor on a composite-resin low-impedance substrate and its application to microwave circuits

被引：9

作者：

Okabe, H ^{[1
]}

Yamada, H ^{[1
]}

Yamasaki, M ^{[1
]}

Kagaya, O ^{[1
]}

Sekine, K ^{[1
]}

Yamashita, K ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan

来源：

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART B-ADVANCED PACKAGING | 1998年 / 21卷 / 03期

关键词：

MCM-D technology; planar spiral inductor; power amplifier module for cellular phone system; resin-embedded face-up type RF-MCM;

D O I：

10.1109/96.704937

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The Q-factors of planar spiral inductors built on a polyimide-SiO2-Si substrate are characterized as a function of the polyimide thickness. We found that inductor quality as high as that on a GaAs-microwave and millimeter-wave integrated circuit (MMIC) requires a polyimide thickness of over 100 mu m, resulting in a Q-factor of over 17, The applicability of a low-impedance substrate was confirmed through the investigation of a novel RF-MCM in a face-up-type structure for cellular phone systems using a composite epoxy resin-metallic substrate. A fabricated power amplifier module exhibited 28.5-dBm output power and 16% power efficiency at 1.75 GHz.

引用

页码：269 / 273

页数：5

共 6 条

[1]

ASHBY KB, 1994, PROCEEDINGS OF THE 1994 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, P179, DOI 10.1109/BIPOL.1994.587889

[2] The modeling, characterization, and design of monolithic inductors for silicon RF IC's [J].

Long, JR ;

Copeland, MA .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1997, 32 (03) :357-369

[3] Design considerations for embedded passives [J].

Lutz, R ;

Tripathi, A ;

Seo, Y ;

Tripathi, V .

1997 WIRELESS COMMUNICATIONS CONFERENCE, PROCEEDINGS, 1997, :181-186

[4] Highly integrated three-dimensional MMIC technology applied to novel masterslice GaAs- and Si-MMIC's [J].

Tokumitsu, T ;

Hirano, M ;

Yamasaki, K ;

Yamaguchi, C ;

Nishikawa, K ;

Aikawa, M .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1997, 32 (09) :1334-1341

[5]

YAMASHITA K, 1998, J JIEP, V1, P47

[6]

YOSHIDA I, 1996, P ESSDERC 96, P405

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