Growth of GaNAs films by molecular beam epitaxy

被引：3

作者：

Foxon, CT ^{[1
]}

Novikov, SV

Campion, RP

Davis, CS

Cheng, TS

Winser, AJ

Harrison, I

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] Univ Nottingham, Sch Elect & Elect Engn, Nottingham NG7 2RD, England

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

growth models; molecular beam epitaxy; gallium compounds; nitrides; semiconducting III-V materials;

D O I：

10.1016/S0022-0248(01)00753-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have investigated arsenic doping of GaN films grown at high temperature (similar to 800 degreesC) by molecular beam epitaxy. Growth in an arsenic environment changes the growth mode and promotes the growth of the cubic polytype. Growth under arsenic also produces films which show strong blue emission at room temperature, whose intensity is dependent on both the As Ru,v and the Ga:N ratio. We propose a growth model based on As incorporation onto the Ga sublattice, which can explain all of our observed data (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：486 / 490

页数：5

共 20 条

[1] Bowing parameter of the band-gap energy of GaNxAs1-x [J].

Bi, WG ;

Tu, CW .

APPLIED PHYSICS LETTERS, 1997, 70 (12) :1608-1610

[2] Nitrogen species from radio frequency plasma sources used for molecular beam epitaxy growth of GaN [J].

Blant, AV ;

Hughes, OH ;

Cheng, TS ;

Novikov, SV ;

Foxon, CT .

PLASMA SOURCES SCIENCE & TECHNOLOGY, 2000, 9 (01) :12-17

[3] SELECTIVE GROWTH OF ZINCBLENDE, WURTZITE, OR A MIXED-PHASE OF GALLIUM NITRIDE BY MOLECULAR-BEAM EPITAXY [J].

CHENG, TS ;

JENKINS, LC ;

HOOPER, SE ;

FOXON, CT ;

ORTON, JW ;

LACKLISON, DE .

APPLIED PHYSICS LETTERS, 1995, 66 (12) :1509-1511

[4]

DIAZ GM, 1997, J CRYST GROWTH, V178, P45

[5] Arsenic mediated reconstructions on cubic (001) GaN [J].

Feuillet, G ;

Hamaguchi, H ;

Ohta, K ;

Hacke, P ;

Okumura, H ;

Yoshida, S .

APPLIED PHYSICS LETTERS, 1997, 70 (08) :1025-1027

[6] Arsenic-doped GaN grown by molecular beam epitaxy [J].

Foxon, CT ;

Novikov, SV ;

Cheng, TS ;

Davis, CS ;

Campion, RP ;

Winser, AJ ;

Harrison, I .

JOURNAL OF CRYSTAL GROWTH, 2000, 219 (04) :327-334

[7] Gallium-induced surface reconstruction patterns of GaN grown by molecular beam epitaxy [J].

Foxon, CT ;

Cheng, TS ;

Novikov, SV ;

Jeffs, NJ ;

Hughes, OH ;

Melnik, YV ;

Nikolaev, AE ;

Dmitriev, VA .

SURFACE SCIENCE, 1999, 421 (03) :377-385

[8] Electronic properties of arsenic-doped gallium nitride [J].

Guido, LJ ;

Mitev, P ;

Gherasimova, M ;

Gaffey, B .

APPLIED PHYSICS LETTERS, 1998, 72 (16) :2005-2007

[9] GaN-rich side of GaNAs grown by gas source molecular beam epitaxy [J].

Iwata, K ;

Asahi, H ;

Asami, K ;

Kuroiwa, R ;

Gonda, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (3B) :1436-1439

[10] AUGER-ELECTRON SPECTROSCOPY, X-RAY-DIFFRACTION, AND SCANNING ELECTRON-MICROSCOPY OF INN, GAN, AND GA(ASN) FILMS ON GAP AND GAAS(001) SUBSTRATES [J].

JENKINS, LC ;

CHENG, TS ;

FOXON, CT ;

HOOPER, SE ;

ORTON, JW ;

NOVIKOV, SV ;

TRETYAKOV, VV .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04) :1585-1590

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