Influence of gate dielectrics on the electrical properties of F8T2 polyfluorene thin-film transistors

被引：16

作者：

Swensen, J ^{[1
]}

Kanicki, J ^{[1
]}

Heeger, AJ ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA

来源：

ORGANIC FIELD EFFECT TRANSISTORS II | 2003年 / 5217卷

关键词：

F8T2; polymer thin-film transistor; gate dielectrics; titanium oxide;

D O I：

10.1117/12.507630

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical properties of polymeric thin film transisitors (P-TFTs) based on poly(9,9-dioctylfluorene-co-bithiophene) alternating copolymer (F8T2) have been studied. Device performance was compared for amorphous silicon nitride deposited by LPCVD and PECVD techniques, aluminum oxide deposited by sputtering, titanium oxide deposited by sputtering, and thermal silicon oxide gate dielectrics. A heavily n-type doped crystalline silicon wafer coated with the desired gate dielectric was used. Photolithographic patterning of source/drain electrodes directly on top of the F8T2 layer is also discussed. The main conclusion from this work is that traps within the F8T2 define the conduction process within the device.

引用

页码：159 / 166

页数：8

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