Inkjet printed copper source/drain metallization for amorphous silicon thin-film transistors

被引：73

作者：

Hong, CM ^{[1
]}

Wagner, S

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] Motorola Inc, Austin, TX 78735 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 08期

关键词：

amorphous silicon; copper metallization; inkjet printing; thin-film transistors;

D O I：

10.1109/55.852958

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Source/drain metallization to amorphous silicon thin-film transistors has been made by inkjet printing. Contact pads of a metal-organic copper precursor were inkjet printed, and then converted to copper metal at a maximum process temperature of 200 degrees C. The copper contacts were used as the mask for back-channel etch. Laser printed toner was used for all other mask levels in a photoresist-free fabrication process. The inkjet printing of copper contacts represents a further step toward an all-printed thin-film transistor technology.

引用

页码：384 / 386

页数：3

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