Strain Sensitivity and Transport Properties in Organic Field-Effect Transistors

被引：34

作者：

Cosseddu, P. ^{[1
,2
]}

Milita, S. ^{[3
]}

Bonfiglio, A. ^{[1
,2
]}

机构：

[1] Univ Cagliari, Dept Elect & Elect Engn, I-09123 Cagliari, Italy

[2] CNR, Natl Res Ctr, Inst Nanosci, I-41125 Modena, Italy

[3] CNR, Natl Res Ctr, Ist Microelettron & Microsistemi, I-40129 Bologna, Italy

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 01期

关键词：

Organic semiconductors; sensors; LARGE-AREA; PRESSURE; MOBILITY;

D O I：

10.1109/LED.2011.2173898

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the electromechanical characterization of organic field-effect transistors (OFETs) fabricated with different organic semiconductors. Pentacene- and poly(3-hexylthiophene-2,5-diyl) (P3HT)-based OFETs have been investigated as strain sensors, and a clear correlation between the structural and morphological properties of the active layer with the device sensitivity has been observed. The highly disordered structure of polymeric films, as P3HT, confirmed by morphological and structural investigations, gives rise to a dramatic reduction of the device response to mechanical stimuli. Nevertheless, an unambiguous, fast, and reproducible response has been obtained also for this material, which, being solution processible, represents a valuable solution for the fabrication of low-cost pressure sensors for a variety of innovative applications.

引用

页码：113 / 115

页数：3

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