Toward strain resistant flexible organic thin film transistors

被引：73

作者：

Jedaa, Abdesselam ^{[1
]}

Halik, Marcus ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Inst Polymer Mat, D-91058 Erlangen, Germany

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 10期

关键词：

organic semiconductors; thin film transistors; FIELD-EFFECT TRANSISTORS; MATRIX; MOBILITY;

D O I：

10.1063/1.3216587

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We suggest a molecular design for small molecules as polycrystalline organic semiconductors in flexible organic thin film transistor applications, providing an improved stability during substrate bending. A stable operation of alkyl-substituted sexithiophens was obtained under strain up to +/- 2.5%. The stability relates to the flexibility of the alkyl chain substitution, scales with their chain length, and outperforms those of pentacene devices. These findings were independent from the underlying dielectric layer.

引用

页数：3

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