The effect of filling on the low-temperature energy diffusion in disordered hopping systems

被引：3

作者：

Arkhipov, VI ^{[1
]}

Adriaenssens, GJ ^{[1
]}

机构：

[1] MOSCOW ENGN PHYS INST,MOSCOW 115409,RUSSIA

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1996年 / 8卷 / 43期

关键词：

CONJUGATED POLYMERS; ELECTRIC-FIELD; TRANSPORT;

D O I：

10.1088/0953-8984/8/43/002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The low-temperature energy relaxation of charge carriers in a disordered hopping system is considered, taking into account the filling of hopping sites by localized carriers. A non-linear equation for the occupation probability is derived and solved under the condition of a constant total density of excited carriers. A characteristic time for the appearance of a quasi-Fermi level is estimated.

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收藏

页码：L637 / L642

页数：6

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