ELECTRONIC TRANSPORT AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS AT LOW-TEMPERATURES

被引：131

作者：

SHKLOVSKII, BI ^{[1
]}

FRITZSCHE, H ^{[1
]}

BARANOVSKII, SD ^{[1
]}

机构：

[1] UNIV CHICAGO,JAMES FRANCK INST,CHICAGO,IL 60637

来源：

关键词：

D O I：

10.1103/PhysRevLett.62.2989

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2989 / 2992

页数：4

共 8 条

[1]

BARANOVSKII SD, IN PRESS FIZ TECHN P

[2] LOW-TEMPERATURE PHOTOCONDUCTIVITY IN A-SI-H FILMS [J].

HOHEISEL, M ;

CARIUS, R ;

FUHS, W .

HOHEISEL, M ;

CARIUS, R ;

FUHS, W .

[4]

Mott N. F., 1979, ELECT PROCESSES NONC

[5]

STREET RA, 1984, SEMICONDUCT SEMIMET, V21, P197

TSANG, C ;

STREET, RA .

PHYSICAL REVIEW B, 1979, 19 (06) :3027-3040

[7] LUMINESCENCE DECAY IN GLOW-DISCHARGE DEPOSITED AMORPHOUS SILICON [J].

TSANG, C ;

STREET, RA .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (05) :601-608

[8]

WANG WC, 1988, AMORPHOUS SILICON RE, P779