Growth of β-FeSi2 thin film on Si (111) by metal-organic chemical vapor deposition

被引：38

作者：

Akiyama, K

Ohya, S

Takano, H

Kieda, N

Funakubo, H

机构：

[1] Kanagawa Ind Technol Res Inst, Kanagawa 2430435, Japan

[2] Kanagawa High Technol Fdn, Takatsu Ku, Kanagawa 2130012, Japan

[3] Shonan Inst Technol, Dept Mat Sci, Kanagawa 2518511, Japan

[4] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 5A期

关键词：

beta-FeSi2; MOCVD; epitaxial film;

D O I：

10.1143/JJAP.40.L460

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We succeeded for the first time in preparing a high-quality (101)-oriented epitaxial beta -FeSi2 film on Si(111) wafer by metalorganic chemical vapor deposition (MOCVD) using Fe(CO)(5) and SiH4 as source materials. The full width at half maximum (FWHM) of the rocking curve of the beta -FeSi2 (202) peak was 0.46 degree for the film deposited at 750 degreesC at a rate of 4 nm/min. Moreover. a smooth-surface film of up to 650 nm thickness could be deposited by this method. Carbon content in the film was less than 0.1 at%.

引用

页码：L460 / L462

页数：3

共 12 条

[1] IRON SILICIDE GROWTH ON SI(111) SUBSTRATE USING THE METALORGANIC VAPOR-PHASE EPITAXY PROCESS [J].