EPITAXIAL-FILMS OF SEMICONDUCTING FESI2 ON (001) SILICON

被引:170
作者
MAHAN, JE
GEIB, KM
ROBINSON, GY
LONG, RG
YAN, XH
BAI, G
NICOLET, MA
NATHAN, M
机构
[1] COLORADO RES DEV CORP,DENVER,CO 80293
[2] TEL AVIV UNIV,DEPT ELECTRON DEVICES & MAT & ELECTROMAGNET RADIAT,IL-69978 TEL AVIV,ISRAEL
[3] CALTECH,PASADENA,CA 91125
关键词
D O I
10.1063/1.103235
中图分类号
O59 [应用物理学];
学科分类号
摘要
Epitaxial thin films of the semiconducting transition metal silicide, beta-FeSi2, were grown on (001) silicon wafers. The observed matching face relationship is FeSi2(100)/Si(001), with the azimuthal orientation being FeSi2[010]||Si〈110〉. This heteroepitaxial relationship has a common unit mesh of 59 Å2 area, with a mismatch of 2.1%. There is a strong tendency toward island formation within this heteroepitaxial system.
引用
收藏
页码:2126 / 2128
页数:3
相关论文
共 11 条
  • [1] Bauer E., 1975, TOP APPL PHYS, V4, P225
  • [2] ELECTRICAL INVESTIGATION OF SEMICONDUCTOR-TO-METAL TRANSITION IN FESI2
    BIRKHOLZ, U
    SCHELM, J
    [J]. PHYSICA STATUS SOLIDI, 1969, 34 (02): : K177 - +
  • [3] A CLARIFICATION OF THE INDEX OF REFRACTION OF BETA-IRON DISILICIDE
    BOST, MC
    MAHAN, JE
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) : 2034 - 2037
  • [4] CHEN MS, 1984, MOL PHARMACOL, V25, P441
  • [5] SEMICONDUCTING SILICIDE-SILICON HETEROJUNCTION ELABORATION BY SOLID-PHASE EPITAXY
    CHERIEF, N
    DANTERROCHES, C
    CINTI, RC
    TAN, TAN
    DERRIEN, J
    [J]. APPLIED PHYSICS LETTERS, 1989, 55 (16) : 1671 - 1673
  • [6] THE INFLUENCE OF STEPS ON THE EPITAXIAL-GROWTH OF IRON-SILICIDE ON SI(001)
    KENNOU, S
    CHERIEF, N
    CINTI, RC
    TAN, TAN
    [J]. SURFACE SCIENCE, 1989, 211 (1-3) : 685 - 691
  • [7] SI-BEAM RADIATION CLEANING IN MOLECULAR-BEAM EPITAXY
    KUGIMIYA, K
    HIROFUJI, Y
    MATSUO, N
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (05): : 564 - 567
  • [8] MAHAN JE, UNPUB
  • [9] Nicolet M.-A., 1983, MAT PROCESS CHARACTE, VVolume 6, P329
  • [10] LATTICE MATCH - AN APPLICATION TO HETEROEPITAXY
    ZUR, A
    MCGILL, TC
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) : 378 - 386