EPITAXIAL-FILMS OF SEMICONDUCTING FESI2 ON (001) SILICON

被引：170

作者：

MAHAN, JE

GEIB, KM

ROBINSON, GY

LONG, RG

YAN, XH

BAI, G

NICOLET, MA

NATHAN, M

机构：

[1] COLORADO RES DEV CORP,DENVER,CO 80293

[2] TEL AVIV UNIV,DEPT ELECTRON DEVICES & MAT & ELECTROMAGNET RADIAT,IL-69978 TEL AVIV,ISRAEL

[3] CALTECH,PASADENA,CA 91125

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 21期

关键词：

D O I：

10.1063/1.103235

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial thin films of the semiconducting transition metal silicide, beta-FeSi2, were grown on (001) silicon wafers. The observed matching face relationship is FeSi2(100)/Si(001), with the azimuthal orientation being FeSi2[010]||Si〈110〉. This heteroepitaxial relationship has a common unit mesh of 59 Å2 area, with a mismatch of 2.1%. There is a strong tendency toward island formation within this heteroepitaxial system.

引用

页码：2126 / 2128

页数：3

共 11 条

[1] Bauer E., 1975, TOP APPL PHYS, V4, P225
[2] ELECTRICAL INVESTIGATION OF SEMICONDUCTOR-TO-METAL TRANSITION IN FESI2
BIRKHOLZ, U
SCHELM, J
[J]. PHYSICA STATUS SOLIDI, 1969, 34 (02): : K177 - +
[3] A CLARIFICATION OF THE INDEX OF REFRACTION OF BETA-IRON DISILICIDE
BOST, MC
MAHAN, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) : 2034 - 2037
[4] CHEN MS, 1984, MOL PHARMACOL, V25, P441
[5] SEMICONDUCTING SILICIDE-SILICON HETEROJUNCTION ELABORATION BY SOLID-PHASE EPITAXY
CHERIEF, N
DANTERROCHES, C
CINTI, RC
TAN, TAN
DERRIEN, J
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (16) : 1671 - 1673
[6] THE INFLUENCE OF STEPS ON THE EPITAXIAL-GROWTH OF IRON-SILICIDE ON SI(001)
KENNOU, S
CHERIEF, N
CINTI, RC
TAN, TAN
[J]. SURFACE SCIENCE, 1989, 211 (1-3) : 685 - 691
[7] SI-BEAM RADIATION CLEANING IN MOLECULAR-BEAM EPITAXY
KUGIMIYA, K
HIROFUJI, Y
MATSUO, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (05): : 564 - 567
[8] MAHAN JE, UNPUB
[9] Nicolet M.-A., 1983, MAT PROCESS CHARACTE, VVolume 6, P329
[10] LATTICE MATCH - AN APPLICATION TO HETEROEPITAXY
ZUR, A
MCGILL, TC
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) : 378 - 386

← 1 2 →