High-pressure induced structural changes in metastable Ge2Sb2Te5 thin films:: An X-ray absorption study

被引:5
作者
Fons, P
Kolobov, AV
Tominaga, J
Katayama, Y
机构
[1] Natl Inst Adv Ind Sci & Technol, Ctr Appl Near Field Opt Res, Tsukuba, Ibaraki 3058562, Japan
[2] JAERI, SPring 8, Sayo, Hyogo 6795148, Japan
关键词
optical memory; Ge-Sb-Te; XAFS; high-pressure; structure;
D O I
10.1016/j.nimb.2005.06.039
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Super-resolution (SR) media offer up to a factor of ten increase in areal storage density over conventional DVD media. Although SR has been realized, there is a strong need for a deeper understanding of structural and electronic changes in Ge2Sb2Te5 (GST), a principal optical memory component, with external perturbations. Recording of SR disks leads to the formation of gas-phase bubbles that in turn lead to the development of large stresses on the underlying GST layer. In this paper we report on XAFS of nominally hydrostatic (0 10 GPa) compressive stress-induced structural changes of the metastable crystalline phase of GST. An analysis showed that the initial splitting of Ge-Te bond lengths of the room-temperature distorted rocksalt structure decreased to a small but finite splitting for p greater than or similar to 6 GPa. The implications of this upon the proposed ferroelectric catastrophe super-RENS readout mechanism are discussed. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:160 / 162
页数:3
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