Characterization of individual nanomagnets by the local Hall effect

被引:41
作者
Monzon, FG [1 ]
Patterson, DS [1 ]
Roukes, ML [1 ]
机构
[1] CALTECH, Pasadena, CA 91125 USA
关键词
local Hall effect; LHE devices; nanomagnets;
D O I
10.1016/S0304-8853(98)01166-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We describe a straightforward approach to the characterization of individual thin-film NiFe ferromagnets, useful from cryogenic to room temperature. The technique is based upon the local Hall effect (LHE), in which strong fringe fields present near the edge of a ferromagnet induce a Hall voltage in a nanoscale semiconducting cross-junction. Hysteresis loops are obtained for individual nanomagnets of widths ranging from 1 mu m to less than 100 nm. The LHE is an intrinsically non-perturbative technique, ideal for application to soft ferromagnetic systems. We anticipate that the theoretical sensitivity of this arrangement can rival that of thin-film SQUID susceptometers, with the added benefit that it is simpler and does not require low temperatures. (C) 1999 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码:19 / 25
页数:7
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