Characteristics of ZnO whiskers prepared from organic-zinc

被引:26
作者
Kubota, J
Haga, K [1 ]
Kashiwaba, Y
Watanabe, H
Zhang, BP
Segawa, Y
机构
[1] Sendai Natl Coll Technol, Aoba Ku, Sendai, Miyagi 9893128, Japan
[2] RIKEN, Photodynam Res Ctr, Sendai, Miyagi 9800857, Japan
关键词
ZnO; Zn(C5H7O2)(2); whisker; oxidation; annealing; photoluminescence;
D O I
10.1016/S0169-4332(03)00388-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
ZnO micro-whiskers were successfully prepared by oxidizing of sublimated zinc acetylacetonate (Zn(C5H7O2)(2)) products. Crystallinity of ZnO whiskers was considerably improved by increasing thermal oxidation temperature. Full width at half maximum (FWHM) of ZnO (10 (1) over bar1) plane peak observed in the X-ray diffraction was 0.186degrees. SEM images of the whiskers oxidized at 1000 degreesC were a bundle of very fine whiskers and almost uniform for surface morphology. Room temperature photoluminescence (PL) spectrum of the whiskers oxidized over 400 degreesC shows a blue emission at wavelength of 420 nm. In the low temperature (4.2 K) PL spectrum of the ZnO whiskers oxidized over 800 degreesC, the emission from exciton bound to natural donor and that from free-exciton recombination were observed at 3.361 and at 3.376 eV, respectively. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:431 / 435
页数:5
相关论文
共 7 条
[1]   Room-temperature ultraviolet nanowire nanolasers [J].
Huang, MH ;
Mao, S ;
Feick, H ;
Yan, HQ ;
Wu, YY ;
Kind, H ;
Weber, E ;
Russo, R ;
Yang, PD .
SCIENCE, 2001, 292 (5523) :1897-1899
[2]   Hetero-epitaxial growth of ZnO thin films by atmospheric pressure CVD method [J].
Kashiwaba, Y ;
Katahira, F ;
Haga, K ;
Sekiguchi, T ;
Watanabe, H .
JOURNAL OF CRYSTAL GROWTH, 2000, 221 (221) :431-434
[3]  
Nezaki D, 2000, T MAT RES SOC JAPAN, V25, P205
[4]   Epitaxial growth of zinc oxide whiskers by chemical-vapor deposition under atmospheric pressure [J].
Satoh, M ;
Tanaka, N ;
Ueda, Y ;
Ohshio, S ;
Saitoh, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (5B) :L586-L589
[5]   STRUCTURE PARAMETERS AND POLARITY OF THE WURTZITE TYPE COMPOUNDS SIC-2H AND ZNO [J].
SCHULZ, H ;
THIEMANN, KH .
SOLID STATE COMMUNICATIONS, 1979, 32 (09) :783-785
[6]   Surface flatness of transparent conducting ZnO:Ga thin films grown by pulsed laser deposition [J].
Suzuki, A ;
Matsushita, T ;
Sakamoto, Y ;
Wada, N ;
Fukuda, T ;
Fujiwara, H ;
Okuda, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (10) :5457-5461
[7]   Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films [J].
Tang, ZK ;
Wong, GKL ;
Yu, P ;
Kawasaki, M ;
Ohtomo, A ;
Koinuma, H ;
Segawa, Y .
APPLIED PHYSICS LETTERS, 1998, 72 (25) :3270-3272