Probing Charge Carrier Density in a Layer of Photodoped ZnO Nanoparticles by Spectroscopic Ellipsometry

被引：59

作者：

Lakhwani, Girish ^{[1
]}

Roijmans, Roel F. H. ^{[1
]}

Kronemeijer, Auke J. ^{[2
]}

Gilot, Jan ^{[1
]}

Janssen, Rene A. J. ^{[1
]}

Meskers, Stefan C. J. ^{[1
]}

机构：

[1] Eindhoven Univ Technol, NL-5600 MB Eindhoven, Netherlands

[2] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2010年 / 114卷 / 35期

关键词：

BAND-GAP VARIATION; THIN-FILMS; OPTICAL-PROPERTIES; OXIDE; NANOWIRES; CRYSTALS;

D O I：

10.1021/jp104846h

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Changes in the optical constants of a layer of ZnO nanoparticles (5 nm diameter) induced by UV illumination in O-2-free atmosphere are determined by using spectroscopic ellipsometry. The onset of optical absorption of ZnO shifts to higher photon energy after illumination. This is interpreted in terms of a Moss-Burstein shift. From the magnitude of the shift, the charge carrier density in the conduction band after UV illumination was determined to be 2 x 10(19) cm(-3), about one carrier per particle. Kelvin probe measurements give a lower limit for the density of 10(18) cm(-3). The free carrier density after illumination is high enough to explain the formation of quasi-ohmic contacts between ZnO and the polymeric p-type conductor poly(3,4-ethylenedioxythiophene) (PEDOT).

引用

页码：14804 / 14810

页数：7

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