Exciton-phonon interactions and exciton dephasing in semiconductor quantum-well heterostructures

被引:29
作者
Bondarev, IV
Maksimenko, SA
Slepyan, GY
Krestnikov, IL
Hoffmann, A
机构
[1] Belarusian State Univ, Inst Nucl Problems, Minsk 220050, BELARUS
[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
关键词
D O I
10.1103/PhysRevB.68.073310
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have investigated exciton-phonon coupling and related exciton dephasing processes in monolayer semiconductor heterostructures with localized quasi two-dimensional (2D) excitonic states. The calculated lateral size dependence of low-temperature Huang-Rhys factors indicates the enhancement of exciton-phonon coupling with decreasing the lateral size of the quasi-2D exciton localization area. This entails the increase of exciton dephasing. At low temperatures, the exciton absorption line exhibits an essentially non-Lorentzian asymmetric shape with the asymmetry increasing with the decrease of temperature and the lateral size of the quasi-2D exciton localization area.
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页数:4
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