Near-field magnetophotoluminescence spectroscopy of composition fluctuations in InGaAsN

被引:80
作者
Mintairov, AM [1 ]
Kosel, TH
Merz, JL
Blagnov, PA
Vlasov, AS
Ustinov, VM
Cook, RE
机构
[1] Univ Notre Dame, EE Dept, Notre Dame, IN 46556 USA
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[3] Argonne Natl Lab, Argonne, IL 60439 USA
关键词
D O I
10.1103/PhysRevLett.87.277401
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The localization of excitons on quantum-dot-like compositional fluctuations has been observed in temperature-dependent near-field magnetophotoluminescence spectra of InGa-AsN. Localization is driven by the giant bowing parameter of these alloys and manifests itself by the appearance of ultranarrow lines (half-width <1 meV) at temperatures below 70 K. We show how near-field optical scanning microscopy can be used for the estimation of the size, density, and nitrogen excess of individual compositional fluctuations (clusters), thus revealing random versus phase-separation effects in the distribution of nitrogen.
引用
收藏
页码:277401 / 277401
页数:4
相关论文
共 27 条
[1]   Strong variation of the exciton g factors in self-assembled In0.60Ga0.40As quantum dots [J].
Bayer, M ;
Kuther, A ;
Schäfer, F ;
Reithmaier, JP ;
Forchel, A .
PHYSICAL REVIEW B, 1999, 60 (12) :R8481-R8484
[2]   Exciton binding energies and diamagnetic shifts in semiconductor quantum wires and quantum dots [J].
Bayer, M ;
Walck, SN ;
Reinecke, TL ;
Forchel, A .
PHYSICAL REVIEW B, 1998, 57 (11) :6584-6591
[3]  
Bimberg D., 1999, QUANTUM DOT HETEROST
[4]   Spectrally resolved overhauser shifts in single GaAs/AlxGa1-xAs quantum dots [J].
Brown, SW ;
Kennedy, TA ;
Gammon, D ;
Snow, ES .
PHYSICAL REVIEW B, 1996, 54 (24) :17339-17342
[5]   Luminescence of as-grown and thermally annealed GaAsN/GaAs [J].
Francoeur, S ;
Sivaraman, G ;
Qiu, Y ;
Nikishin, S ;
Temkin, H .
APPLIED PHYSICS LETTERS, 1998, 72 (15) :1857-1859
[6]   Photocurrent of 1 eV GaInNAs lattice-matched to GaAs [J].
Geisz, JF ;
Friedman, DJ ;
Olson, JM ;
Kurtz, SR ;
Keyes, BM .
JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) :401-408
[7]   Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well [J].
Grenouillet, L ;
Bru-Chevallier, C ;
Guillot, G ;
Gilet, P ;
Duvaut, P ;
Vannuffel, C ;
Million, A ;
Chenevas-Paule, A .
APPLIED PHYSICS LETTERS, 2000, 76 (16) :2241-2243
[8]   Local probe techniques for luminescence studies of low-dimensional semiconductor structures [J].
Gustafsson, A ;
Pistol, ME ;
Montelius, L ;
Samuelson, L .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (04) :1715-1775
[9]   Magnetooptical studies of a single quantum dot: Excited states and spin flip of excitons [J].
Heller, W ;
Bockelmann, U .
PHYSICAL REVIEW B, 1997, 55 (08) :R4871-R4874
[10]   Photoluminescence spectroscopy of self-assembled InAs quantum dots in strong magnetic field and under high pressure [J].
Itskevich, IE ;
Henini, M ;
Carmona, HA ;
Eaves, L ;
Main, PC ;
Maude, DK ;
Portal, JC .
APPLIED PHYSICS LETTERS, 1997, 70 (04) :505-507