Is aluminum a suitable buffer layer for carbon nanotube growth?

被引：36

作者：

de los Arcos, T ^{[1
]}

Wu, ZM ^{[1
]}

Oelhafen, P ^{[1
]}

机构：

[1] Univ Basel, Inst Phys, CH-4056 Basel, Switzerland

来源：

CHEMICAL PHYSICS LETTERS | 2003年 / 380卷 / 3-4期

关键词：

D O I：

10.1016/j.cplett.2003.09.057

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The possibility of using Al buffer layers for the catalytic chemical vapor deposition growth of carbon nanotubes has been investigated by in situ photoelectron spectroscopy. It was found that at the temperatures used for carbon nanotube growth, typically well above the eutectic temperature of the Al-Si system, the liquid Al-Si alloy formed getters efficiently the metallic catalyst away from the surface, thus precluding nanotube growth. (C) 2003 Elsevier B.V. All rights reserved.

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页码：419 / 423

页数：5

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