Generalized Einstein relation for disordered semiconductors with exponential distributions of tail states and square-root distributions of band states

被引:27
作者
Nguyen, TH
O'Leary, SK
机构
[1] Informat Syst Management Corp, Regina, SK S4S 7H1, Canada
[2] Univ Regina, Fac Engn, Regina, SK S4S 0A2, Canada
关键词
D O I
10.1063/1.1604178
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present a generalized Einstein relation analysis, applicable for disordered semiconductors with exponential distributions of tail states and square-root distributions of band states. We find that there are substantial deviations from the traditional nondegenerate form of this relation, these deviations arising as a consequence of the degeneracy of the occupation statistics within disordered semiconductors. We use these results to account for some hydrogenated amorphous silicon experimental results. (C) 2003 American Institute of Physics.
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页码:1998 / 2000
页数:3
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