ON THE MODIFICATION OF THE EINSTEIN RELATION FOR HEAVILY DOPED SEMICONDUCTORS HAVING GAUSSIAN BAND TAILS

被引：8

作者：

GHATAK, KP

CHOWDHURY, AK

GHOSH, S

CHAKRAVARTI, AN

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1980年 / 99卷 / 01期

关键词：

D O I：

10.1002/pssb.2220990158

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：K55 / K60

页数：6

共 16 条

[1]

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[2]

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[3]

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BUTCHER, PN ;

CHAKRAVARTI, AN ;

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[5] TEMPERATURE-DEPENDENCE OF DIFFUSIVITY-MOBILITY RATIO IN DEGENERATE SEMICONDUCTORS IN PRESENCE OF A LARGE MAGNETIC-FIELD [J].

CHAKRAVARTI, AN ;

PARUI, DP .

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[6] INFLUENCE OF BAND TAILS ON DIFFUSIVITY-MOBILITY RATIO IN HIGHLY DEGENERATE SEMICONDUCTORS [J].

CHAKRAVARTI, AN ;

PARUI, DP .

PHYSICS LETTERS A, 1973, A 43 (01) :60-60

[7]

Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1

[8] BAND STRUCTURE IN DISORDERED ALLOYS AND IMPURITY SEMICONDUCTORS [J].

JAMES, HM ;

GINZBARG, AS .

JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) :840-848

[9] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE [J].

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[10] IMPURITY CONCENTRATION DEPENDENCE OF DENSITY OF STATES IN SEMICONDUCTORS [J].

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SOLID-STATE ELECTRONICS, 1971, 14 (03) :199-+

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