Thermoreflectance spectroscopy of CdGa2Te4 -: art. no. 045218

被引：13

作者：

Sasaki, M ^{[1
]}

Ozaki, S ^{[1
]}

Adachi, S ^{[1
]}

机构：

[1] Gunma Univ, Fac Engn, Dept Elect Engn, Kiryu, Gumma 3768515, Japan

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.72.045218

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thermoreflectance (TR) spectra of the defect-chalcopyrite-type semiconductor CdGa2Te4 have been measured in the 1.4-5.5-eV photon-energy range at T=40-300 K. The experimental TR spectra reveal distinct structures at energies of the E-1-E-8 critical points (CP's). These CP's are successfully assigned to specific points in the Brillouin zone. The temperature variation of the CP parameters has also been determined and analyzed using the Varshni equation and an analytical four-parameter expression developed for the explanation of the band-gap shrinkage effect in semiconductors.

引用

页数：6

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