Advanced techniques for glancing angle deposition

被引:480
作者
Robbie, K [1 ]
Sit, JC [1 ]
Brett, MJ [1 ]
机构
[1] Univ Alberta, Dept Elect & Comp Engn, Edmonton, AB T6G 2G7, Canada
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 03期
关键词
D O I
10.1116/1.590019
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
When a thin film is deposited by physical vapor deposition, with the vapor flux arriving at an oblique angle from the substrate normal, and under conditions of sufficiently limited adatom mobility to create a columnar microstructure, the resulting structure is somewhat porous and grows at an angle inclined toward the vapor source. For a given material and set of deposition conditions, there is a fixed relationship between the angle of vapor flux incident on the substrate and the inclination angle at which the columnar thin film grows. As the porosity of the film is also dependent on the incident flux angle, column growth angle and porosity cannot be chosen independently. If a large columnar angle (more parallel to the substrate) is desired, the flux must be deposited at a large oblique angle resulting in a very porous film. Conversely, if a near vertical columnar film is desired, the flux must arrive more perpendicular to the substrate and the resulting film has a tightly packed, dense microstructure. We present a technique, based on glancing angle deposition, employing substrate motion during deposition, which allows the columnar growth inclination angle and film density to be controlled independently. With this method, microstructurally controlled materials can be fabricated with three dimensional control on a 10 nm scale for use in optical, chemical, biological, mechanical, magnetic, and electrical applications. (C) 1998 American Vacuum Society.
引用
收藏
页码:1115 / 1122
页数:8
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