Long wavelength MEMS tunable VCSEL with InP-InAlGaAs bottom DBR

被引：35

作者：

Boucart, J ^{[1
]}

Pathak, R ^{[1
]}

Zhang, DX ^{[1
]}

Beaudoin, M ^{[1
]}

Kner, P ^{[1
]}

Sun, DC ^{[1
]}

Stone, RJ ^{[1
]}

Nabiev, RF ^{[1
]}

Yuen, WP ^{[1
]}

机构：

[1] Bandwidth9, Oakland, CA 94611 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2003年 / 15卷 / 09期

关键词：

laser tuning; quantum-well lasers; semiconductor lasers; surface-emitting lasers; tunnel diodes; MU-M; 1.55-MU-M;

D O I：

10.1109/LPT.2003.816673

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we present the first demonstration of a long wavelength-tunable vertical-cavity surface-emitting laser (VCSEL) using an InP-InAlGaAs distributed Bragg reflector (DBR). The use of such a DBR improves the thermal resistance of the VCSEL while keeping the growth process simple. The devices show operation to temperatures greater than 75 degreesC, and single-mode devices emit powers as high as 0.9 mW at room temperature. The tuning range is as high as 17 nm.

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页码：1186 / 1188

页数：3

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