Low-threshold index-guided 1.5 μm long-wavelength vertical-cavity surface-emitting laser with high efficiency

被引：104

作者：

Ortsiefer, M ^{[1
]}

Shau, R ^{[1
]}

Böhm, G ^{[1
]}

Köhler, F ^{[1
]}

Amann, MC ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 16期

关键词：

D O I：

10.1063/1.126290

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A significantly improved InP-based vertical-cavity surface-emitting laser with record device performance is demonstrated. Utilizing a twofold epitaxial growth process, self-adjusted lateral current confinement and index guiding are accomplished by means of a buried InGa(Al)As tunnel junction. Front and back mirrors are realized by 35 epitaxial InGaAlAs/InAlAs layer pairs and a 1.5 MgF2/a-Si layer pair, respectively. At room temperature and under continuous wave condition, lasers with small aperture diameters of only 13 mu m exhibit record output powers of 1.6 mW with quantum efficiencies around 25%. For these devices, threshold current and voltage are as low as 4 mA and 1.2 V, respectively, because of low series resistances around 70 Omega. (C) 2000 American Institute of Physics. [S0003-6951(00)05016-6].

引用

页码：2179 / 2181

页数：3

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